un it reverse v oltage: 20 to 100 v olts forward current: 2.0 amp rohs device d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) cdbm220-hf thru cdbm2100-hf page 1 qw -jb003 smd schottky barrier rectifiers rev :a comchip t echnology co., l td. mini sma/sod-123 0.154(3.9) 0.138(3.5) 0.012(0.3) t yp. 0.071(1.8) 0.055(1.4) 0.126(3.2) 0.1 10(2.8) 0.067(1.7) 0.051(1.3) 0.035(0.9) t yp. 0.035(0.9) t yp. cdbm cdbm 260-hf cdbm 280-hf 14 20 30 21 30 60 42 60 50 0.5 10 85 160 80 56 80 230-hf features mechanical data molded plastic, jedec minisma/sod-123. -w eight:0.027 gram(approx.). -batch process design, excellent powe dissipation of fers better reverse leakage current and thermal resistance. -low profile surface mounted application in order to optimize board space. -t iny plastic smd package. -low power loss, high ef ficiency . -high current capability , low forward voltage dorp. -high surge capability . -guardring for overvoltage protection. -ultra high-speed switching. -silicon epitaxial planarchip, metal silicon junction. -lead-free parts meet environmental standards of mil-std-19500 /228 -case: -t erminals: solde plated, solderable per mil-std-750, method 2026. -polarity: indicated by cathode band. -mounting position: any pa ra m et er sy m bo l cdbm 220-hf 20 cdbm 2100-hf 100 70 100 cdbm 28 40 50 35 50 250-hf cdbm 240-hf 40 repetitive peak reverse voltage maximum rms voltage continuous reverse voltage maximum forward voltage @i f =2.0a forward rectified current v rrm v rms v r v f i o 0.70 0.50 0.85 2.0 forward surge current, 8.3ms half sine wave superimposed on rated load (jedec method) t yp. thermal resistance, junction to ambient air t yp. diode junction capacitance (note 1) operating junction temperature storage temperature i fsm i r r ja c j t j t stg reverse current on v r =v rrm @t a =25 o c @t a =125 o c note 1: f=1mhz and applied 4v dc reverse voltage. -55 to +125 -55 to +150 -65 to +175 v v v v a a ma pf o c o c o c/w maximum ratings (at t a =25c unless otherwise noted) halogen free
page 2 qw -jb003 rev :a comchip t echnology co., l td. smd schottky barrier rectifiers rating and characteristic curves ( ) cdbm220-hf thru cdbm2100-hf fig.2 t ypical forward characteristics - 0 . 0 1 i f , i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a ) v f , forward v oltage (v) 0 . 1 fig.1 - t ypical forward current derating curve i o , a v e r a g e d f o r w a r d c u r r e n t ( a ) o t a , ambient t emperature ( c) 0 1 0 0 fig.3 maximum non-repetitive peak - forward surge current number of cycles at 60hz 0 2 . 0 1 . 5 1 0 0 2 . 3 1 5 0 5 0 2 0 0 1 . 0 0 i f s m , p e a k f o r w a r d s u r g e c u r r e n t ( a ) 5 0 1 1 0 0 3 0 1 0 1 0 0 . 3 0 . 5 0 . 7 1 . 3 0 . 9 1 . 1 0 . 1 1 1 0 o t j =25 c pulse width 300 s 1% duty cycle - 2 0 4 0 o t j =25 c 8.3ms single half sine wave, jedec method fig.4 t ypical junction capacitance - v r , reverse v oltage (v) 0 c j , j u n c t i o n c a p a c i t a n c e ( p f ) 7 0 0 . 0 1 1 0 0 4 0 0 1 1 0 0 3 0 0 6 0 0 0 . 1 1 0 2 0 0 5 0 0 fig.5 t ypical reverse characteristics - percent of rated peak reverse v oltage (%) . 0 1 i r , r e v e r s e c u r r e n t ( m a ) 1 0 0 0 1 4 0 6 0 . 1 1 1 0 2 0 4 0 1 2 0 8 0 1 0 0 o t j =25 c o t j =75 c c d b m 2 5 0 - h f ~ c d b m 2 6 0 - h f c d b m 2 2 0 - h f ~ c d b m 2 4 0 - h f c d b m 2 5 0 - h f ~ c d b m 2 1 0 0 - h f c d b m 2 2 0 - h f ~ c d b m 2 4 0 - h f c d b m 2 8 0 - h f ~ c d b m 2 1 0 0 - h f
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